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6675 FDS6675BZ P-Channel PowerTrench® MOSFET -30V, -11A, 13mΩVDS = -30VID = -11A @ VGS = -10V, RDS(on) = 13mΩID = -9A @ VGS = -4.5V, RDS(on) = 21.8mΩThis P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-st..

6676As FDS6676AS 6676AS30V N-Channel PowerTrench® SyncFET™VDS=30VID=14.5A @ VGS=10VThe FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low ga..

6679Az FDS6679AZP-Channel PowerTrench® MOSFET -30V, -13A, 9mΩVDS = -30VID = -13A @ VGS = -10V, RDS(on) = 9.3mΩID = -11A @ VGS = -4.5V, RDS(on) = 14.8mΩThis P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-..

6690 FDS6690AS 6690AS30V N-Channel PowerTrench® SyncFET™VDS=30VID=10A @ VGS=10VThe FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate c..

6900 Dual N-Ch PowerTrench® SyncFET™ 6900ASMOSFET1 (Switch Q1): Optimized for low switching losses Low Gate Charge (11nC typical)VDS=30VID=6.9A @ VGS=10VMOSFET2 (Switch Q2): Optimized to minimize conduction losses icludes SyncFET Schottky body diodeVDS=30VID=8.2A @ VGS=10VThe FDS6900AS is designed t..

7636 Si7636DPN-Channel 30-V (D-S) MOSFETVDS = 30VID = 28A @ VGS = 10V, RDS(on) = 4mΩID = 28A @ VGS = 4.5V, RDS(on) = 4.8mΩ..

7686 Si7686DPN-Channel 30-V (D-S) MOSFETVDS = 30VID = 35A @ VGS = 10V, RDS(on) = 9.5mΩID = 35A @ VGS = 4.5V, RDS(on) = 14mΩ..

7692 FDMS7692 N-Channel PowerTrench® MOSFET30 V, 7.5 mΩVDS = 30V„ID = 13A, Max rDS(on) = 7.5mΩ at VGS = 10VID = 10A, Max rDS(on) = 13mΩ at VGS = 4.5V Advanced Package and Silicon combination for low rDS(on) and high efficiencyThis N-Channel MOSFET has been designed specifically to improve the overal..

7832 F7832IRF7832 N-ChannelHEXFET Power MOSFETVDS=30VID=20A..

7836 IRF7836PbF N-Channel HEXFET Power MOSFET F7836VDS = 30VID = 17A @ VGS = 10V, RDS(on) = 5.7mΩ..

7904 IRF7904PbF HEXFET Power MOSFETMOSFET1 (Switch Q1): Optimized for low switching losses Low Gate Charge (11nC typical)VDS=30VID=7.6A @ VGS=10VMOSFET2 (Switch Q2): Optimized to minimize conduction losses icludes SyncFET Schottky body diodeVDS=30VID=11A @ VGS=10V..

8119Ln OZ8119LNOZ811 is DC/DC controller for the next generation of microprocessor power supplies, their peripherals and chipsets. OZ811 steps down the high battert voltage to low ouput voltages in the range of 0.5V to 2.75V. High efficiency, DC accuracy and excellent transient response make OZ811 t..