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2659 MDS2659 N-Channel MOSFET SOP8VDS=30VID=15A @ VGS=10V..

389 RJK0389DPA, K0389Silicon Dual N Channel Power MOS FET with Schottky Barrier DiodeHigh Speed Power SwitchingMOSFET1VDS = 30VID = 15A @ VGS = 10VMOSFET2VDS = 30VID = 20A @ VGS = 10V..

39A126 MB39A126PFV Charging Power Controller IC..

4141 FDS4141P-Channel PowerTrench® MOSFET-40V, -10.8A, 13.0mΩVDS=-40VID=-10.5A @ VGS=-10VID=-8.4A @ VGS=-4.5VThis P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance..

4168 VDS=30VID=24A @ VGS=10VID=21A @ VGS=4.5V..

4232 4232BGM, AP4232BGM-HF DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFETVDS = 30VID = 7.6A @ VGS = 10V, RDS(on) = 22mΩAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness...

4413 P-channel D-SVds = -30VRds(on) = 0.0075 at Vgs = -10VRds(on) = 0.011 at Vgs = -4.5VId = -15A at Vgs = -10VId = -12.3A at Vgs = -4.5V..

4422 AO4422N-Channel Enhancement Mode Field Effect TransistorVDS=30VID=11A @ VGS=10VThe AO4422 uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. Thisdevice is suitable for use as a load switch or in PWMapplications. The source leads are separated to allowa Kelvin conne..

4430 AO4430 30V N-Channel MOSFETVDS=30VID=18A @ VGS=10V, RDS(on)..

4435 VDS=-30VID=-10.5A @ VGS=-20VThe AO4435 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications...

4456 AO445630V N-Channel MOSFET SRFETVDS=30VID=20A @ VGS=10VSRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose a..

4459A Si4459ADYP-Channel 30-V (D-S) MOSFETVDS = -30VID = -29A @ VGS = -10V, RDS(on) < 5mΩID = -23A @ VGS = -4.5V, RDS(on) < 7.75mΩ..